| PART |
Description |
Maker |
| FDH27N50 |
27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET
Discrete Commercial N-Channel SMPS Power MOSFET, 500V, 27A, 0.19 Ohms @ VGS = 10V, TO-247 Package
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDMS2572 FDMS257207 |
N-Channel UltraFET Trench? MOSFET 150V, 27A, 47m
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| W28NK60Z STW28NK60Z |
N-CHANNEL 600 V - 0.155?/a> - 27A TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| UF540 UF540L-TA3-T UF540G-TA3-T |
27A, 100V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| FDB390N15A |
N-Channel PowerTrench? MOSFET 150V, 27A, 39m
|
Fairchild Semiconductor
|
| RJK4515DPK-00T0 RJK4515DPK-12 |
450V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRGBC40 IRGBC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
|
International Rectifier
|
| SM-3-S-H-I-TL |
RF COAXIAL RELAY, SP6T, FAILSAFE, 0.27A (COIL), 12VDC (COIL), 3240mW (COIL), 6000MHz, PANEL MOUNT
|
RLC ELECTRONICS INC
|
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5018BLL APT5018SLL |
POWER MOS 7 500V 27A 0.180 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| L353 L352 L351 L552 L553 L554 L551 L611 L613 L612 |
THYRISTOR MODULE|AC SWITCH|280V V(RRM)|15A I(T)
THYRISTOR MODULE|AC SWITCH|240V V(RRM)|15A I(T)
THYRISTOR MODULE|AC SWITCH|120V V(RRM)|15A I(T)
THYRISTOR MODULE|AC SWITCH|240V V(RRM)|27A I(T)
THYRISTOR MODULE|AC SWITCH|280V V(RRM)|27A I(T)
THYRISTOR MODULE|AC SWITCH|480V V(RRM)|25A I(T)
THYRISTOR MODULE|AC SWITCH|120V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|120V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|280V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|480V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|480V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|480V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|240V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|480V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|280V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|120V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|120V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|280V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|480V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|480V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|480V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|120V V(RRM)|15A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|120V V(RRM)|27A I(T)
|
|
| HGTP12N60B3D HGT1S12N60B3DS |
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
